MMBT2907A RFG 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Taiwan Semiconductor MMBT2907A RFG
- Transistor Type: PNP
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 600mA
- Power Dissipation (Pd): 350mW
- Transition Frequency (fT): 200MHz
- DC Current Gain (hFE@Ic,Vce): 100@150mA,10V
- Collector Cut-Off Current (Icbo): 50nA
- Collector-Emitter Breakdown Voltage (Vceo): 60V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1.6V@500mA,50mA
- Package: SOT-23(TO-236)
- Manufacturer: Taiwan Semiconductor